Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-A31-10]Electronic Structure Associated with Carrier Delocalization in Boron-Doped Amorphous Carbon

〇Subaru Nakashima¹, Yuji Muraoka², Daiki Ootsuki², Yokoya Takayoshi², Takanori Wakita³, Yoshinori Kotani³, Takahiro Kawai³, Yoshiyuki Ohtsubo⁴ (1.Okayama Univ. ELST, 2.Okayama Univ. RIIS, 3.JASRI/NanoTerasu, 4.QST/NanoTerasu)

Keywords:

amorphous,semiconductor,carbon

Achieving high electrical conductivity in amorphous semiconductors has been a long-standing challenge due to carrier localization caused by their disordered structure. it is reported recently that the carrier delocalization has been achieved in the boron-doped a-C with pulsed laser annealing (PLA), but the detailed mechanism of the delocalization remains unclear. In this study, we prepare the samples by PLA and study the mechanism of the carrier delocalization. We will discuss the results of both the electronic states and transport properties.

Back to Session information