Session Details

[11a-A31-1~13]6.2 Carbon-based thin films

Fri. Sep 11, 2026 9:00 AM - 12:30 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:30 AM UTC
A31 (Faculty of Info. Sci. & Tech. Bldg.)

[11a-A31-1]Electrical characteristics of a 7Be-implanted diamond thin films

〇Yasuto Miyake1, Hideyuki Watanabe2,1, Hiroki Okuno1 (1.RIKEN RNC, 2.AIST)

[11a-A31-2]Deep-Leve Defect Characterization of Electron Irradiated Diamonds Using Alpha-Particle Induced Charge Transient Spectroscopy

〇Shinichiro Sato1, Yuji Sone1, Naoya Iwamoto2, Tsubasa Matsumoto3 (1.QST, 2.NIT, Kagawa, 3.Kanazawa Univ.)

[11a-A31-3]Anisotropic Mechanical Dissipation Governed by Phonon–Defect Interactions in Single-Crystal Diamond

〇Zhaozong Zhang1, Guo Chen1, Wen Zhao1, Satoshi Koizumi1, Meiyong Liao1 (1.NIMS)

[11a-A31-4]Electrical Readout of Single-Crystal Diamond MEMS Resonators for Infrared Sensing

〇(P)Guo Chen1, Zhaozong Zhang1, Satoshi Koizumi1, Meiyong Liao1 (1.NIMS)

[11a-A31-5]Relationship Between Surface Properties and Epithelial Cell Adhesion of Nanodiamond Films

〇Yamato Ikiyama1, Hiroshi Naragino1, Itsuki Misono1, Lining Lou1, A.Z. Ahmed1, Tomohiro Yoshida2, Yohei Jinno3, Yasushige Sakamoto3, Ikiru Atsuta3, Yasunori Ayukawa3, Tsuyoshi Yoshitake1 (1.IGSES, Kyushu Univ., 2.Mechanics and Electronics Res. Inst., Fukuoka Ind. Technol. Cent., 3.Fac. Dent. Sci., Kyushu Univ.)

[11a-A31-6]Effect of Deposition Conditions on Sub-Bandgap Photoelectron Emission from Silver/Boron-Doped Diamond Composite Films

〇Hisao Miyazaki1, Yuma Yamaguchi1, Akira Fujimoto1, Shigeya Kimura1, Kazuya Ohira1 (1.Toshiba Corp. Lab.)

[11a-A31-7]Synthesis of Solid-State Luminescent Carbon Dots with High Quantum Yield

〇(M1)Yuuki Hisamitsu1, Inoue Ken1, Suzuki Ryo1, Tachibana Masaru1 (1.Yokohama City Univ.)

[11a-A31-8]Evaluation of physical properties of sulfur-doped carbon nitride thin films

〇Taichi Sakurai1, Taisei Kasahara1, Yoshio Hashimoto1, Noriyuki Urakami1 (1.Shinshu Univ. Faculty of Eng.)

[11a-A31-9]Physical properties in layered carbon nitride films via phosphorus incorporation

〇Taisei Kasahara1, Sakurai Taichi1, Yoshio Hashimoto1, Noriyuki Urakami1 (1.Shinshu Univ.)

[11a-A31-10]Electronic Structure Associated with Carrier Delocalization in Boron-Doped Amorphous Carbon

〇Subaru Nakashima1, Yuji Muraoka2, Daiki Ootsuki2, Yokoya Takayoshi2, Takanori Wakita3, Yoshinori Kotani3, Takahiro Kawai3, Yoshiyuki Ohtsubo4 (1.Okayama Univ. ELST, 2.Okayama Univ. RIIS, 3.JASRI/NanoTerasu, 4.QST/NanoTerasu)

[11a-A31-11]Structure and Properties of Amorphous Carbon Films for Advanced Semiconductor Patterning: Insights from Solid-State NMR

〇Toshihiro Kamei1 (1.AIST SFRC)

[11a-A31-12]Structure and Properties of Amorphous Carbon Films for Advanced Semiconductor Patterning: Insights from Raman spectroscopy

〇Toshihiro Kamei1 (1.AIST SFRC)

[11a-A31-13]Effects of Substrate Bias Voltage on the Properties of Diamond-Like Carbon Films Doped with Silicon and Nitrogen

〇Rinntaro Takemura1, Ayame Hosokawa1, Shota Ito1, Yushi Suzuki1, Yoshiharu Enta1, Yasuyuki Kobayashi1, Hideki Nakazawa1 (1.Hirosaki Univ.)