Presentation Information
[11a-A31-2]Deep-Leve Defect Characterization of Electron Irradiated Diamonds Using Alpha-Particle Induced Charge Transient Spectroscopy
〇Shinichiro Sato1, Yuji Sone1, Naoya Iwamoto2, Tsubasa Matsumoto3 (1.QST, 2.NIT, Kagawa, 3.Kanazawa Univ.)
Keywords:
diamond,Deep-Level,Radiaion Effects
Single-crystal chemical vapor deposition (CVD) diamond thin films possess excellent electrical properties, including a wide bandgap and high carrier mobility. In addition, they exhibit high mechanical strength as well as chemical and thermal stability, making them promising candidates for devices operating in harsh environments such as space and nuclear facilities. While their practical used has steadily progressed with advances in crystal growth and device fabrication technologies, knowledge of electrically active radiation-induced defects (defect levels), which is essential for semiconductor devices operating in radiation environments, remains unclear. In this study, we investigate the defect levels in diamond with radiation-induced defects using alpha-particle induced charge transient spectroscopy.