[11a-C309-1~14] 15.5 Group IV crystals and alloys

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[11a-C309-13] Control of carrier concentration in a strained SiGe spin transport layer
using ion implantation

〇Sota Inoue¹, Kenji Oki¹, Sora Obinata^1,2,3, Keitaro Kato⁴, Shuya Kikuoka⁴, Takahiro Inoue⁵, Michihiro Yamada⁴, Kentarou Sawano⁴, Keisuke Yamamoto⁶, Kohei Hamaya^1,2,3 (1.GSES, The Univ. of Osaka., 2.CSRN, The Univ. of Osaka., 3.OTRI-Spin, The Univ. of Osaka., 4.Adv. Res. Lab., Tokyo City Univ., 5.IRCNST, Tokyo City Univ., 6.REISI, Kumamoto Univ.)

Keywords:

spintronics,ion implantation,SiGe