[11a-C309-1~14] 15.5 Group IV crystals and alloys

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[11a-C309-4] MBE Growth of SiGe/Si Multilayers on Si(110) Substrates and Evaluation of Critical Thickness

〇Keitaro Kato¹, Tomohiro Hagiwara¹, Kentarou Sawano¹, Michihiro Yamada¹, Yuichiro Mitani¹ (1.Tokyo City Univ.)

Keywords:

Silicon Germanium,Silicon(110),Molecular Beam Epitaxy