Presentation Information

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[11a-C309-5]nvestigation of evaluation method for critical thickness of (Si/SiGe)x3/Si(110) superlattice for NS

〇Koji Usuda¹, Kiu Inami^2,3, Naoto Kumagai^3,4, Toshifumi Irisawa^3,4, Atsushi Ogura^1,2 (1.Meiji Univ., MREL, 2.Meiji Univ., 3.AIST, 4.LSTC)

Keywords:

SiGe,Si(110),critical thickness

The formation of defect-free nanosheets (NS) is crucial for realizing high-performance Si(110) channel GAA-FETs. This report attempts to evaluate superlattice relaxation by detecting hatches appearing on the surface of a 3-period (Si/SiGe)/Si(110) superlattice, assuming a 3-layer NS equivalent to that of a real device. The results suggest that hatches occur on the surface of the structure only when the multilayer film exceeds its critical thickness. Therefore, the method described in this report is expected to be a method capable of evaluating superlattice relaxation during actual NS formation.

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