Presentation Information

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-6]Off-Cut Dependence of Facet Structures Formed on SiGe Layers Grown on Si(110) Substrates

〇Kiu Inami^1,2, Koji Usuda³, Naoto Kumagai^1,4, Toshifumi Irisawa^1,4, Atsushi Ogura^2,3 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL, 4.LSTC)

Keywords:

SiGe,Si(110),off-cut

This study reports the dependence of surface morphology on off-cut conditions during SiGe growth on Si(110) substrates. SiGe layers were deposited by chemical vapor deposition (CVD) on Si(110) substrates with off-cut angles of 2–10° toward the <100> and <110> directions and characterized by AFM and TEM. Periodic ridge-and-valley structures were observed on <100> off-cut substrates, whereas multiple facet orientations appeared on <110> off-cut substrates, indicating distinct facet formation behaviors depending on the off-cut direction. Since these surface structures were observed regardless of the presence of a Si buffer layer, precise control of off-cut conditions is essential for SiGe thin-film design in next-generation FET technologies.

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