[11a-C309-1~14] 15.5 Group IV crystals and alloys

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-7] Effects of B₂O₃ interfacial layer insertion on the in-plane uniformity of composition-graded SiGe layer grown on Si substrates via melting and solidification of Al–Ge alloys

〇Aoi Higaki¹, Ryoji Katsube¹, Hideaki Miyamiyama², Marwan Dhamrin^2,3, Noritaka Usami^1,4,5 (1.Grad, Eng. Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ., 4.IMaSS Nagoya Univ., 5.InFuS Nagoya Univ.)

Keywords:

melting and solidification,in-plane uniformity,Control of interfacial reactions

For the development of low cost substrates for multi-junction solar cells, it is necessary to eliminate the in-plane non-uniformity in SiGe/Si virtual substrates fabricated via the melting and solidification of Al–Ge pastes. Therefore, the effects of inserting a B₂O₃ interfacial layer were investigated to promote the decomposition reaction of SiO_x, which is considered a primary cause of the non-uniformity. The results revealed that the SiGe/Si interface was planarized in certain regions of the sample. These planarized regions correlated with areas where a thicker B₂O₃ layer was present, demonstrating the potential to fabricate virtual substrates with a planar interface by achieving uniform B₂O₃ film deposition.