Presentation Information

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-C309-9]Investigation of dislocation identification methods in composition-graded SiGe films based on near-infrared polarized transmission microscopy and transmission electron microscopy observations

〇(M2)Manami Iwata¹, Ryoji Katsube¹, Shota Suzuki², Hideaki Minamiyama², Marwan Dhamrin^2,3, Noritaka Usami^1,4,5 (1.Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka Univ., 4.InFuS Nagoya Univ., 5.IMaSS Nagoya Univ.)

Keywords:

SiGe,Near-infrared polarized transmission microscopy,Crystal defects

For the practical application of SiGe/Si virtual substrates for III-V multijunction solar cells, evaluation of crystal defects in the SiGe layer is crucial. We are working to establish a wide-field, non-destructive defect evaluation technique on a several-centimeter scale using near-infrared polarized transmission microscopy. In this study, we investigated the correspondence between dislocation structures identified by transmission electron microscopy (TEM) observation and polarized transmission images, with the aim of establishing a dislocation species analysis method using near-infrared polarized transmission microscopy.

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