[11a-E201-1~8] 13.3 Insulator technology

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-E201-4] ALD YOx/Ge MOS Structures toward Ge GAAFETs

〇Keisei Kawana^1,2, Kouhei Wakimoto^1,2, Wen Chang¹, Chia Tsong Chen¹, Toshiyuki Tsutsumi^1,2, Tatsuro Maeda¹ (1.AIST, 2.Meiji Univ.)

Keywords:

Ge GAAFETs,Ge MOS structure,ALD-YOx

To realize Ge GAAFETs, we evaluated the electrical characteristics of ALD-grown YOx/Ge MOS structures. Compared with thermal ALD, plasma ALD yielded a higher Cox and a lower interface state density, demonstrating favorable interface quality comparable to that of AlOx. However, although thinning YOx to 3 nm reduced the CET to approximately 1.7 nm, increased fixed charge, trap density, and leakage current emerged as key challenges.