Presentation Information
[11a-E201-5]Band alignment anomalies in oxide-semiconductor MOS interface observed by flatband voltage shifts: A comparative study of Al2O3/β-Ga2O3 and SiO2/β-Ga2O3
〇Atsushi Tamura1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
Keywords:
Ga2O3,interface dipole effect,oxide-semiconductor
Changes in the band alignment at the MOS interface can be detected as shifts in the flat-band voltage (VFB). While it is known that dipole effects become prominent at the High-k/SiO2 interface, a similar phenomenon may also affect the band alignment at the interface between an oxide semiconductor and an oxide insulator. In this study, we systematically investigated VFB employing SiO2/β-Ga2O3 and Al2O3/β-Ga2O3 MOS interfaces as examples. An anomalous VFB was observed in the Al2O3/β-Ga2O3 MOS, which is believed to be an effect specific to the material.