[11a-E201-1~8] 13.3 Insulator technology

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[11a-E201-6] V_fb control of HfZrO₂ capacitors using new LaTiO and AlTiO dipole layers

〇Toshihide Nabatame^1,2, Tomomi Sawada^1,2, Hiromi Miura^1,2, Manami Miyamoto^1,2, Takashi Onaya^1,2, Kazuhito Tsukagoshi^1,2, Naoki Fukata^1,2, Wipakorn Jevasuwan^1,2, Shinji Migita^2,3 (1.NIMS, 2.LSTC, 3.AIST)

Keywords:

dipole,LaTiO,AlTiO

In this study, we report on the dipole effects of new La₂O₃-TiO₂ (LaTiO) and Al₂O₃-TiO₂ (AlTiO) compounds utilizing the weak dipole strength of TiO₂ (TiO).