[11a-E206-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-E206-11] Epitaxial growth of BiSb thin films using a Mg₂Si buffer layer

〇Takeru Kuriyama¹, Kouki Nejo¹, Keisuke Kawazoe¹, Tomohiro Iwashita¹, Nobuhisa Suzuki¹, Shun Ito¹, Haruhiko Udono¹, Shunya Sakane¹ (1.Ibaraki Univ.)

Keywords:

Topological insulator,Thermoelectric conversion,Molecular beam epitaxy

We investigated the effect of introducing a Mg₂Si(111) buffer layer, which has an extremely small lattice mismatch of less than 1%, on the growth of topological insulator Bi_0.9Sb_0.1 thin films. The films were grown on c-plane sapphire substrates using molecular beam epitaxy (MBE), and their structural properties were evaluated by RHEED and XRD. The results confirmed that while direct growth resulted in polycrystalline films, the introduction of the buffer layer enabled high-quality epitaxial growth with c-axis orientation.