The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[11a-E206-1~11]13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 11, 2026 9:00 AM - 12:00 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
E206 (First Year Education Bld. E Block)
Chair : Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)
IR detection; thermoelectrics; crystal growth, optical and electrical properties
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[11a-E206-1]Distribution of Carrier Concentration in Mg2Si Crystals Measured by Microscopic FTIR Mapping

Minoru Okawara1, Koutaro Tetsu1, Kousuke Shimano1, Shunya Sakane1, 〇Haruhiko Udono1 (1.Ibaraki University)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[11a-E206-2]Evaluation of Carrier Distribution in 50 mm-Diameter Mg2Si Single Crystals

〇Kotaro Tetsu1, Minoru Okawara1, Kosuke Shimano1, Shunya Sakane1, Xin Liu2, Noritaka Usami2, Haruhiko Udono1 (1.Ibaraki Univ., 2.Nagoya Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[11a-E206-3]Evaluation of In-Plane Resistivity Distribution in Ag-Doped Mg2Si Single Crystals by Four Point Probe Method: Effect of Geometrical Correction

〇Kosuke Shimano1, Minoru Okawara1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[11a-E206-4]Photoluminescence of bulk Mg2Si

〇Shinichirou Gozu1, Kosuke Shimano2, Shunya Sakane2, Haruhiko Udono2 (1.AIST, 2.Ibaraki Univ)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[11a-E206-5]Effect of Annealing Temperature on Phase Formation in Ag-doped Mg2Si Thin Films

〇Kaito Masuda1, Hiroshi Katsumata1 (1.Meiji Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[11a-E206-6]Low-temperature synthesis of Mg2(Si,Ge,Sn) thin films for flexible thermoelectrics

〇(M2)Takenori Nakajima1, Takamitsu Ishiyama2, Shintaro Maeda1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.AIST)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[11a-E206-7]Decomposition mechanism of epitaxial Mg3Bi2 thin films under atmospheric conditions

〇Shunya Sakane1, Tomohiro Iwashita1, Akito Ayukawa1, Takeru Kuriyama1, Koki Nejo1, Dai Inoue1, Hitoshi Abe1, Haruhiko Udono1 (1.Ibaraki Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)English Presentation

[11a-E206-8]Lattice Dynamics of Thermoelectric Ba2AgSi3 Studied by Raman Spectroscopy and First-Principles Calculations

〇Thao Dieu Nguyen1, Kimimaru Kajihara1, Taiga Shinohara1, Yoichiro Koda2, Masami Mesuda2, Hikaru Takeshima2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corp.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-E206-9]Synthesis and Characterization of Ba–Ag–Cu–Si Thin Films Grown by Molecular Beam Epitaxy

〇(M1)Taiga Shinohara1, Kimimaru Kajihara1, Hikaru Takeshima2, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corporation)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-E206-10]La substitution effects on thermoelectric properties of SrSi2

〇Motoharu Imai1 (1.TMU)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-E206-11]Epitaxial growth of BiSb thin films using a Mg2Si buffer layer

〇Takeru Kuriyama1, Kouki Nejo1, Keisuke Kawazoe1, Tomohiro Iwashita1, Nobuhisa Suzuki1, Shun Ito1, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ.)
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