Session Details
[11a-E206-1~11]13.2 Exploratory Materials, Physical Properties, Devices
Fri. Sep 11, 2026 9:00 AM - 12:00 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
E206 (First Year Education Bld. E Block)
[11a-E206-1]Distribution of Carrier Concentration in Mg2Si Crystals Measured by Microscopic FTIR Mapping
Minoru Okawara1, Koutaro Tetsu1, Kousuke Shimano1, Shunya Sakane1, 〇Haruhiko Udono1 (1.Ibaraki University)
[11a-E206-2]Evaluation of Carrier Distribution in 50 mm-Diameter Mg2Si Single Crystals
〇Kotaro Tetsu1, Minoru Okawara1, Kosuke Shimano1, Shunya Sakane1, Xin Liu2, Noritaka Usami2, Haruhiko Udono1 (1.Ibaraki Univ., 2.Nagoya Univ.)
[11a-E206-3]Evaluation of In-Plane Resistivity Distribution in Ag-Doped Mg2Si Single Crystals by Four Point Probe Method: Effect of Geometrical Correction
〇Kosuke Shimano1, Minoru Okawara1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
[11a-E206-4]Photoluminescence of bulk Mg2Si
〇Shinichirou Gozu1, Kosuke Shimano2, Shunya Sakane2, Haruhiko Udono2 (1.AIST, 2.Ibaraki Univ)
[11a-E206-5]Effect of Annealing Temperature on Phase Formation in Ag-doped Mg2Si Thin Films
〇Kaito Masuda1, Hiroshi Katsumata1 (1.Meiji Univ.)
[11a-E206-6]Low-temperature synthesis of Mg2(Si,Ge,Sn) thin films for flexible thermoelectrics
〇(M2)Takenori Nakajima1, Takamitsu Ishiyama2, Shintaro Maeda1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.AIST)
[11a-E206-7]Decomposition mechanism of epitaxial Mg3Bi2 thin films under atmospheric conditions
〇Shunya Sakane1, Tomohiro Iwashita1, Akito Ayukawa1, Takeru Kuriyama1, Koki Nejo1, Dai Inoue1, Hitoshi Abe1, Haruhiko Udono1 (1.Ibaraki Univ.)
[11a-E206-8]Lattice Dynamics of Thermoelectric Ba2AgSi3 Studied by Raman Spectroscopy and First-Principles Calculations
〇Thao Dieu Nguyen1, Kimimaru Kajihara1, Taiga Shinohara1, Yoichiro Koda2, Masami Mesuda2, Hikaru Takeshima2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corp.)
[11a-E206-9]Synthesis and Characterization of Ba–Ag–Cu–Si Thin Films Grown by Molecular Beam Epitaxy
〇(M1)Taiga Shinohara1, Kimimaru Kajihara1, Hikaru Takeshima2, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corporation)
[11a-E206-10]La substitution effects on thermoelectric properties of SrSi2
〇Motoharu Imai1 (1.TMU)
[11a-E206-11]Epitaxial growth of BiSb thin films using a Mg2Si buffer layer
〇Takeru Kuriyama1, Kouki Nejo1, Keisuke Kawazoe1, Tomohiro Iwashita1, Nobuhisa Suzuki1, Shun Ito1, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ.)
