[11a-E206-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[11a-E206-6] Low-temperature synthesis of Mg₂(Si,Ge,Sn) thin films for flexible thermoelectrics

〇(M2)Takenori Nakajima¹, Takamitsu Ishiyama², Shintaro Maeda¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.AIST)

Keywords:

thermoelectric conversion,polycrystalline thin film,crystal growth

Mg₂X (X = Si, Ge, Sn) narrow-gap semiconductors have long attracted attention as environmentally friendly thermoelectric materials because they exhibit relatively large Seebeck coefficients, S, at room temperature. However, their high thermal conductivity, κ, has been a major bottleneck in improving their thermoelectric performance. In our previous studies, we demonstrated high thermoelectric performance by reducing κ in polycrystalline alloy thin films. In this study, we aimed to synthesize Mg₂(Si,Ge,Sn) thin films on glass substrates, demonstrate their thermoelectric performance, and extend this approach to plastic substrates.