[11a-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[11a-E301-1] Metastable (In_xGa_1-x)₂O₃ formation beyond the thermodynamic stability regime via a mist reaction field

〇Toshiyuki Kawaharamura^1,2, Sohaib Hassan¹, Abhay Kumar Mondal¹, Kun Liu¹, Htet Su Wai¹ (1.Graduate School of Eng., Kochi Univ. of Tech., 2.Res. Inst., Kochi Univ. of Tech.)

Keywords:

mist CVD,(InxGa(1-x))2O3,Metastable phase

While first-principles calculations and conventional fabrication methods suggest that α-AlGaOx cannot be synthesized across the entire compositional range, mist CVD enables the growth of single-crystalline oriented films over the entire compositional range. In contrast, thermodynamic calculations predict that α-InGaOx becomes amorphous in the 20-80% In composition range, and mist CVD yields similar results. However, when an α-InGaOx thin film with 30% In was deposited on top of an α-InGaOx thin film with a 20 % In, we successfully achieved the formation of a single-crystalline oriented film even outside the thermodynamically stable compositional range.