[11a-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 87th JSAP Autumn Meeting 2026

Session Details

Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-E301-1~11]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 11, 2026 9:00 AM - 12:00 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC

E301 (First Year Education Bld. E Block)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[11a-E301-1]Metastable (In_xGa_1-x)₂O₃ formation beyond the thermodynamic stability regime via a mist reaction field

〇Toshiyuki Kawaharamura^1,2, Sohaib Hassan¹, Abhay Kumar Mondal¹, Kun Liu¹, Htet Su Wai¹ (1.Graduate School of Eng., Kochi Univ. of Tech., 2.Res. Inst., Kochi Univ. of Tech.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[11a-E301-2]Investigation of Spin-Coating Conditions of SnO₂ Thin Films for the Fabrication of CdTe/SnO₂ Heterojunctions

〇Rikuto Fukuda¹, Sosuke Ishiguro¹, Madan Niraula¹ (1.Nitech)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[11a-E301-3]Low-Temperature Growth of In₂O₃ Thin Films on SiO₂/Si Substrates by Mist CVD

〇(M2)Tarou Iizuka¹, Ryo Ishikawa¹, Ryu Yamamoto¹, Haruki Ishikawa¹, Ryuma Iida¹, Koutarou Ogawa¹, Shinya Aikawa¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin University)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[11a-E301-4]Investigation of Deposition Conditions for growing High-Quality Cu₂O Thin Films by Mist CVD

〇(M2C)Ryosuke Ohashi^1,2, Chiaki Watanabe¹, Ryoma Yoshida¹, Kei Mizumoto^1,2, Hetet Su Wai¹, Sohaib Hassan¹, Toshiyuki Kawaharamura^1,2,3 (1.KUT., 2.Graduate School of Eng., 3.Rws. Inst.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[11a-E301-5]The relationship between annealing conditions and localized surface plasmon resonance wavelength of silver thin films made by mist CVD

〇Kei Mizumotm², Ryosuke Ohashi², Tiaki Watanabw¹, Ryouma Yosida¹, Htet Su¹, Sohaib Hassan¹, Toshiyuki Kawaharamura^1,2,3 (1.School of Sys. Eng., 2.Graduate School of Eng., 3.Res. Inst)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[11a-E301-6]Fabrication and Characterization of MSIM Diodes for RF Rectification with Low-k Dielectrics

〇Yuya Yasaki¹, Aikawa Shinya¹, Ishigami Shu¹, Matsufuji Yuma¹ (1.Kogakuin Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[11a-E301-7]Exploration of Wide-Gap Semiconductor and Dielectric Materials in Ilmenite-Type Structures and Study of Their Controlling Features

〇Jimbee Tanaka¹, Keisuke Ide¹, Takayoshi Katase^1,2, Hideo Hosono¹, Toshio Kamiya¹ (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-E301-8]Epitaxial Growth of Non-Equilibrium In₄Sn₃O₁₂ Phase by Pulsed Laser Deposition and its Semiconductor Properties

〇Toma Sakanushi¹, Tomoya Suzuki¹, Keisuke Ide¹, Takayoshi Katase^1,2, Hidenori Hiramatsu^1,2, Hideo Hosono¹, Toshio Kamiya¹ (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[11a-E301-9]A thermodynamic approach for oxygen vacancy elimination in oxide semiconductors

〇SiMeng Chen¹, Hirofumi Nishida¹, Takuya Hoshii¹, Kazuo Tsutsui², Hitoshi Wakabayashi², Kuniyuki Kakushima¹ (1.Inst. Science Tokyo School of Eng., 2.Inst. Science Tokyo IIR)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-E301-10]Reinterpretation of XPS O1s Peaks: Implications for Oxygen Vacancy Analysis in Oxide Semiconductors

〇Takashi Yamamoto¹, Tomohiro Sakata¹, Kengo Ogawa¹, Shingo Ogawa¹, Noriyuki Fujiyama¹, Yukiharu Uraoka², Takanori Takahashi² (1.TRC, 2.NAIST)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[11a-E301-11]Quantitative analysis of desorption behavior of H, O, and Zn in IGZO films using TDS combined
with compositional analysis

〇Kengo Ogawa¹, Noriko Kitamura¹, Takashi Yamamoto¹, Yukiharu Uraoka², Takanori Takahashi² (1.Toray Research Center, 2.NAIST)

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