[11a-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-E301-10] Reinterpretation of XPS O1s Peaks: Implications for Oxygen Vacancy Analysis in Oxide Semiconductors

〇Takashi Yamamoto¹, Tomohiro Sakata¹, Kengo Ogawa¹, Shingo Ogawa¹, Noriyuki Fujiyama¹, Yukiharu Uraoka², Takanori Takahashi² (1.TRC, 2.NAIST)

Keywords:

Oxide semiconductor,XPS

We investigated the relationship between oxygen vancancies in oxide semiconductors (In-Ga-Zn-O (IGZO) and In-Ga-O (IGO)) and the high binding energy component (approximately 531-532 eV) observed in tthe O1s spectrum obtained by X-ray photoelectron spectroscopu (XPS). The results suggested in that this high binding energy component is unlikely to direct reflect oxygen vacancies, and may instead be attributed to signals arising from multiple chemical speciese, including organic oxygen species, hydroxyl groups, and adsorbed water.