Presentation Information
[11a-E301-11]Quantitative analysis of desorption behavior of H, O, and Zn in IGZO films using TDS combined
with compositional analysis
〇Kengo Ogawa1, Noriko Kitamura1, Takashi Yamamoto1, Yukiharu Uraoka2, Takanori Takahashi2 (1.Toray Research Center, 2.NAIST)
Keywords:
Oxide semiconductor,TDS,Elemental analysis
The combination of thermal desorption spectroscopy (TDS) and compositional analysis enabled the direct correlation between light-element desorption behavior and compositional changes in IGZO thin films. In particular, a quantitative relationship between Zn desorption and the reduction in Zn content was demonstrated, revealing the effectiveness of this approach for evaluating the thermal stability of oxide semiconductors.