[11a-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[11a-E301-6] Fabrication and Characterization of MSIM Diodes for RF Rectification with Low-k Dielectrics

〇Yuya Yasaki¹, Aikawa Shinya¹, Ishigami Shu¹, Matsufuji Yuma¹ (1.Kogakuin Univ.)

Keywords:

RF rectification diodes,Low-k,schottky

Targeting rectenna applications for RF energy harvesting, we fabricated MSIM diodes by inserting a semiconductor layer into conventional high-frequency MIM rectifying diodes and evaluated their rectification characteristics. Device characterization demonstrated that they possess the nonlinearity at the zero-bias point required for RF-DC conversion. Furthermore, as the control of electrode materials and the carrier concentration of the semiconductor layer was found to be effective for performance improvement, we report these devices as having a novel structure.