[11a-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-E301-8] Epitaxial Growth of Non-Equilibrium In₄Sn₃O₁₂ Phase by Pulsed Laser Deposition and its Semiconductor Properties

〇Toma Sakanushi¹, Tomoya Suzuki¹, Keisuke Ide¹, Takayoshi Katase^1,2, Hidenori Hiramatsu^1,2, Hideo Hosono¹, Toshio Kamiya¹ (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)

Keywords:

semiconductor

For three-dimensional (3D) integration of non-volatile memory in Si ULSI, oxide semiconductor TFTs are expected due to their ultralow leakage current. To achieve high-speed operation new high-mobility materials are required. In this research, we investigated the potential of the non-equilibrium phase In₄Sn₃O₁₂ as a high-mobility candidate by growing epitaxial films and with assistance of first-principles calculations. We succeeded in growing epitaxial films at 300 ℃ and obtained Hall mobility ~ 50 cm²/Vs.