[11a-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[11a-E301-9] A thermodynamic approach for oxygen vacancy elimination in oxide semiconductors

〇SiMeng Chen¹, Hirofumi Nishida¹, Takuya Hoshii¹, Kazuo Tsutsui², Hitoshi Wakabayashi², Kuniyuki Kakushima¹ (1.Inst. Science Tokyo School of Eng., 2.Inst. Science Tokyo IIR)

Keywords:

oxide semiconductor,oxygen vacancy