Presentation Information
[11a-N101-3]Low-voltage operation of GaN:Eu nanowire LEDs enabled by tunnel junctions
〇Jun Tatebayashi1,2, Raiki Hada1, Shuhei Ichikawa1, Yasufumi Fujiwara3,4 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.QIQB, The Univ. of Osaka, 3.Sanken, The Univ. of Osaka, 4.Ritsumeikan Univ.)
Keywords:
nanowire,Rare-earth-doped semiconductors,Europium
GaN nanowire (NW) light-emitting diodes (LEDs) are promising candidates for next-generation microdisplays and retinal projection displays owing to their high color purity and scalability. However, their practical application is hindered by the high operating voltage originating from the high resistance of the p-GaN and GaN layers. In this study, we fabricated GaN NW LEDs incorporating tunnel junctions (TJs) on top of the p-GaN layer to improve carrier injection efficiency and reduce device resistance. The NW structures were grown by selective-area organometallic vapor phase epitaxy, and current-injection devices were fabricated using PDMS embedding and wet etching processes. The TJ-integrated NW LEDs exhibited a reduced turn-on voltage compared with conventional structures, demonstrating effective resistance reduction by introducing TJs. In addition, room-temperature electroluminescence measurements revealed a distinct red emission at around 622 nm originating from Eu3+ ions. These results indicate that TJ incorporation is an effective approach for achieving low-voltage operation and improving the device performance of GaN NW LEDs, paving the way toward high-brightness and high-resolution flexible light-emitting devices.