The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[11a-N101-1~9]15.4 III-V-group nitride crystals

Fri. Sep 11, 2026 9:00 AM - 11:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 2:30 AM UTC
N101 (First Year Education Bld. N Block)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N101-1]Investigation of growth conditions for Multi Quantum Well Growth of Red GaInN-Based Multi Quantum Shells

〇(M1)Himari Suzuki1, Haruki Hotta1, Takuya Takahashi1, Koki Yamada1, Haruki Sawazaki1, Hiroki Teshima1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1 (1.Meijo Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N101-2]Effects of Device Geometry on Current Leakage in GaN-Based Quantum Shell Devices

〇Koki Yamada1, Hiroki Teshima1, Takuya Takahashi1, Haruki Sawazaki1, Haruki Hotta1, Himari Suzuki1, Koichi Naniwae2, Kazumasa Niwa2, Jyunya Iihama3, Yoshiro Kususe3, Masami Mesuda3, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ., 2.E&E Evolution CO.LTD, 3.Tosoh Corporation)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[11a-N101-3]Low-voltage operation of GaN:Eu nanowire LEDs enabled by tunnel junctions

〇Jun Tatebayashi1,2, Raiki Hada1, Shuhei Ichikawa1, Yasufumi Fujiwara3,4 (1.Grad. Sch. Eng., The Univ. of Osaka, 2.QIQB, The Univ. of Osaka, 3.Sanken, The Univ. of Osaka, 4.Ritsumeikan Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N101-4]Proposal and Evaluation of a Full-Area Emission Structure for Stacked GaInN-Based Monolithic μLED Arrays

〇Koko Fukushima1, Keisuke Takeya1, Takumi Tsukamoto1, Kazuya Takagi1, Ren Takahashi1, Yoshinobu Suehiro1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N101-5]Implementation and Electrical Characterization of Monolithic µLED Arrays with a Uniform Electrode-Height Structure

〇Takumi Tsukamoto1, Koko Fukushima1, Keisuke Takeya1, Kazuya Takagi1, Ren Takahashi1, Yoshinobu Suehiro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[11a-N101-6]Fabrication of Flexible MicroLED Film Using Wide Hollow Structure for Enhanced Heat Dissipation

〇Ruri Kurogi1, Atsushi Nishikawa2, Alexander Loesing2, Hiroto Sekiguchi1 (1.Meijo Univ., 2.ALLOS)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[11a-N101-7]Fabrication of vertical BGaN neutron detectors on free-standing GaN substrates and protype multi pixel structured devices for neutron imaging

〇Sotaro Takenaka1, Ryohei Kudo1, Yura Maeda1, Eito Kokubo2, Kohei Toyoda3, Genichiro Wakabayashi4, Tatsuro Oda5, Masahiro Hino6, Yoshio Honda7, Hiroshi Amano7, Yoku Inoue1, Toru Aoki3,8, Takayuki Nakano1,8 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Shizuoka Univ. C.M.M.P., 4.Kindai Univ., 5.ISSP. Univ. of Tokyo, 6.KURNS Kyoto Univ., 7.IMaSS. Nagoya Univ., 8.R.I.E. Shizuoka Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-N101-8]A Novel Bonding Technology between microLEDs on EGOS (ELO GaN on Sapphire) Substrate and Au micro-bump on Silicon

〇Akiko Komoda1, Sooyoung Moon1, Yuichiro Hayashi1, Yoshinobu Kawaguchi1, Keisuke Kawamura1, Takeshi Kamikawa1 (1.KYOCERA Corporation)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[11a-N101-9]High-Q GaN MEMS resonators on sapphire enabled by a lattice-matched AlxIn1-xN sacrificial layer

〇Masataka Imura1, Takanobu Hiroto1, Takayoshi Oshima1, Takaaki Mano1, Wen Zhao1, Meiyong Liao1, Yuri Itokazu2, Masafumi Jo3, Tateki Mori4, Ya Zhang4 (1.NIMS, 2.BeamTech., 3.RIKEN, 4.TUAT)
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