Presentation Information

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N102-3]Photoluminescence Characterization of Low-Temperature-Grown AlGaN-Based UV-B Laser-Diode Active Layers

〇Rintaro Kobayashi¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

AlGaN-based UV-B laser diode,Photoluminescence (PL),Low-temperature growth

To investigate the effects of low-temperature growth on the active layers of AlGaN-based UV-B laser diodes, excitation-power-dependent photoluminescence (PL) measurements were performed on samples grown at temperatures ranging from 750 to 1000 °C for both the active layer and surrounding layers. The results showed that the sample grown at 775 °C exhibited high PL intensity under both low- and high-excitation conditions, suggesting that the enhanced abruptness of heterointerfaces achieved by low-temperature growth contributes to improved emission properties.

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