[11a-N102-1~9] 15.4 III-V-group nitride crystals | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[11a-N102-1~9]15.4 III-V-group nitride crystals

Fri. Sep 11, 2026 9:00 AM - 11:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 2:30 AM UTC

N102 (First Year Education Bld. N Block)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[11a-N102-1]Exciton fine structure in ultrawide-band-gap semiconductor AlN studied by high-energy-resolution deep-ultraviolet magnetophotoluminescence spectroscopy

〇Takumi Ikeshima¹, Mitsuru Funato¹, Ryota Ishii¹ (1.Kyoto Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N102-2]Exciton fine structure in ultrawide-band-gap semiconductor AlN studied by ultra-high-energy-resolution deep-ultraviolet magnetophotoluminescence spectroscopy

〇Takumi Ikeshima¹, Mitsuru Funato¹, Ryota Ishii¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N102-3]Photoluminescence Characterization of Low-Temperature-Grown AlGaN-Based UV-B Laser-Diode Active Layers

〇Rintaro Kobayashi¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N102-4]Low-temperature PL and reflectance spectra of high-purity GaN films grown by hydride vapor phase epitaxy

〇Ririka Yamagata¹, Atsushi A. Yamaguchi¹, Shota Kaneki², Hajime Fujikura² (1.Kanazawa Inst. Tech., 2.Sumitomo Chemical Co., Ltd.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[11a-N102-5]Analysis of Photothermal Deflection Spectroscopy Spectral Shapes

〇(M1)Naoya Fujisawa¹, Raiya Hirose¹, Kazuki Osada¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[11a-N102-6]Characterization of in-gap states in GaN tunnel junctions grown on a p-GaN layer

〇(M2)Raiya Hirose¹, Motoki Kondo¹, Kazuki Osada¹, Yudai Tsuji¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[11a-N102-7]Effect of thermal annealing on deep levels in heavily Mg-doped GaN

〇(M1)Yudai Tsuji¹, Motoki Kondo¹, Raiya Hirose¹, Kazuki Osada¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-N102-8]Characterization of sub-bandgap optical absorption processes in 40-nm-thick AlInN alloys using AlInN/GaN multilayer structures

〇(M2)Mikiya Fukushima¹, Haruki Nishihata¹, Kouki Noda¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[11a-N102-9]Analysis of in-gap states in high-Al-content AlGaN grown at different temperatures

〇Takeshi Suzuki¹, Syunsuke Obata¹, Teppei Takehisa¹, Daichi Imai¹, Tetuya Takeuchi¹ (1.Meijo Univ.)

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