[11a-N102-1~9] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-N102-4] Low-temperature PL and reflectance spectra of high-purity GaN films grown by hydride vapor phase epitaxy

〇Ririka Yamagata¹, Atsushi A. Yamaguchi¹, Shota Kaneki², Hajime Fujikura² (1.Kanazawa Inst. Tech., 2.Sumitomo Chemical Co., Ltd.)

Keywords:

GaN,exciton,Exciton binding energy

In this study, low-temperature photoluminescence and reflectance measurements were performed on a GaN film grown using a newly developed hydride vapor phase epitaxy (HVPE) system, and the results were compared with those of a conventional sample. The new sample exhibited a reduced emission linewidth, indicating improved crystal quality. Furthermore, the 2s state of the C exciton (C₂) was clearly observed in the reflectance spectrum. The binding energy of the C exciton was found to be nearly identical to those of the A and B excitons.