[11a-N102-1~9] 15.4 III-V-group nitride crystals

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[11a-N102-6] Characterization of in-gap states in GaN tunnel junctions grown on a p-GaN layer

〇(M2)Raiya Hirose¹, Motoki Kondo¹, Kazuki Osada¹, Yudai Tsuji¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

Keywords:

nitride semiconductor,tunnel junction