[11a-N102-1~9] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[11a-N102-7] Effect of thermal annealing on deep levels in heavily Mg-doped GaN

〇(M1)Yudai Tsuji¹, Motoki Kondo¹, Raiya Hirose¹, Kazuki Osada¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

Keywords:

nitride semiconductor,deep level