[11a-N102-1~9] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[11a-N102-8] Characterization of sub-bandgap optical absorption processes in 40-nm-thick AlInN alloys using AlInN/GaN multilayer structures

〇(M2)Mikiya Fukushima¹, Haruki Nishihata¹, Kouki Noda¹, Daichi Imai¹, Tetsuya Takeuchi¹ (1.Meijo Univ.)

Keywords:

Nitride Semiconductor,Photothermal Deflection Spectroscopy