Presentation Information
[11a-PA2-4]Molecular dynamics study of void formation process in the modified layer of laser-irradiated Si
〇(M2)Hiroki Okuzono1, Manabu Ishimaru1 (1.Kyushu inst.)
Keywords:
Laser processing,Stealth Dicing,Molecular dynamics simulation
In stealth dicing, the voids that form within the wafer serve as the starting point for cleavage, but the their formation mechanism remains unclear. In this study, we performed molecular dynamics simulations to investigate the mechanism of void formation in laser-irradiated Si. By applying laser heating and cooling, the void formation was reproduced, resulted in a 4.5% residual volume. It has been suggested that expansion pressure at the central region causes irreversible structural strain (i.e. plastic deformation), in the surrounding crystal lattice, which plays a crucial role in void formation.