Session Details
[11a-PA2-1~4]13.4 Si processing /Si based thin film / MEMS / Equipment technology
Fri. Sep 11, 2026 9:00 AM - 10:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 1:30 AM UTC
Fri. Sep 11, 2026 12:00 AM - 1:30 AM UTC
PA2 (1st Gymnasium)
[11a-PA2-1]Nano micro surface generation via Si epitaxial growth using helicon-sputtering
〇Akira Kakuta1, Keisuke Watanabe1 (1.NIT,Tokyo College)
[11a-PA2-2]Simple Air-Exposure-Free Direct Bonding of Fused Silica via Contacting in Ultrapure Water
〇Hidemasa Yamane1 (1.ORIST)
[11a-PA2-3]Fabrication of a Si Slit for Space Ultraviolet Spectroscopy Using a Single-Sided Wet Etching Jig
〇(B)Itsuki Nagase1, Yuki Ashikari1, Tatsuya Sakamoto1, Biao Zhao2, Chiemi Oka1, Ryoichi Koga3, Yasuhiro Hirahara2, Seiichi Hata1 (1.Nagoya Univ. School of Eng., 2.Nagoya Univ. School of Sci., 3.Nagoya City Univ. School of Data Sci.)
[11a-PA2-4]Molecular dynamics study of void formation process in the modified layer of laser-irradiated Si
〇(M2)Hiroki Okuzono1, Manabu Ishimaru1 (1.Kyushu inst.)
