Presentation Information
[11a-PA6-3]Realization of Pseudomorphic Undoped Low-Resistivity AlN/GaN on AlN by MOVPE Method
〇Akira Yoshikawa1, Ziyi Zhang1, Maki Kushimoto2, Yoshio Honda2, Hiroshi Amano2 (1.ULTEC Inc., 2.Nagoya univ.)
Keywords:
AlN,2DEG
Group-III pulsed-supply growth by MOVPE was applied to pseudomorphic AlN/GaN on AlN structures for next-generation high-frequency devices. As a result, a significant improvement in the 2DEG characteristics was achieved while maintaining atomic-level surface flatness and lattice matching with the AlN substrate. The obtained characteristics surpassed those of conventional MOVPE-grown structures as well as MBE-grown structures, demonstrating the effectiveness of MOVPE for realizing high-performance AlN/GaN heterostructures.