[11a-PA6-1~23] 15.4 III-V-group nitride crystals | The 87th JSAP Autumn Meeting 2026

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Poster presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[11a-PA6-1~23]15.4 III-V-group nitride crystals

Fri. Sep 11, 2026 11:00 AM - 12:30 PM JST
Fri. Sep 11, 2026 2:00 AM - 3:30 AM UTC

PA6 (1st Gymnasium)

English Presentation

[11a-PA6-1]Investigation of Nitrogen Plasma Irradiation Effect on GaN Growth
on ScAlMgO₄ Substrate by RF-MBE Technique

〇(P)Earul Islam¹, Gentatsuro Hata², Trang Nakamoto³, Takashi Fujii^1,4, Ryuichi Sugie², Tsutomu Araki² (1.Ritsumeikan Uni., ROST, 2.Ritsumeikan Uni., Col. of Sci. & Eng., 3.Ritsumeikan Uni., R-GIRO, 4.Fukuda Crystal Lab.)

[11a-PA6-2]Growth of GaN layer by plasma-enhanced LPE method(VI)

〇(M1)Naoto Kato¹, Kento Kawai¹, Daiki Hirose¹, Fusuke Matsumura¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

[11a-PA6-3]Realization of Pseudomorphic Undoped Low-Resistivity AlN/GaN on AlN by MOVPE Method

〇Akira Yoshikawa¹, Ziyi Zhang¹, Maki Kushimoto², Yoshio Honda², Hiroshi Amano² (1.ULTEC Inc., 2.Nagoya univ.)

[11a-PA6-4]Growth of InN layer by plasma-enhanced LPE method(I)

〇(M1)Gen Takahashi¹, Ryota Yamashiro¹, Fusuke Matsumura¹, Daiki Hirose¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

[11a-PA6-5]Polarity and Structural Control of GaN Thin Films Using a Sputtering GaN Target

〇Mirei Tokiwa¹, Hidehiko Misaki¹, Yoshihiro Ueoka¹, Ken Matsumura², Masami Mesuda¹ (1.Tosoh Corp., 2.Tosoh Analysis and Research Center Co., Ltd.)

[11a-PA6-6]Growth of InN layer by plasma-enhanced LPE method (II)

〇(M1)Kento Kawai¹, Haruto Kitamura¹, Fusuke Matsumura¹, Daiki Hirose¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

[11a-PA6-7]Photoelectrochemical Water Splitting Reaction Processes on InGaN-based Photoanodes

〇Kazuhide Kumakura¹, Yudai Yamashita², Kazuyuki Hirama², Yoshitaka Taniyasu², Taketomo Sato¹ (1.Hokkaido Univ., 2.NTT BRL)

[11a-PA6-8]Growth of InN layer by plasma-enhanced LPE method (III)

〇(M1)Haruto Kitamura¹, Gen Takahashi¹, Fusuke Matsumura¹, Daiki Hirose¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

[11a-PA6-9]Investigation of the Photoluminescence Enhancement Mechanism in InGaN/GaN Quantum Wells by Dielectric Thin Film Deposition and UV Laser Irradiation

〇Keigo Hiromoto¹, Naoki Ueda¹, Tetsuya Matsuyama¹, Shunsuke Murai¹, Kenji Wada², Mitsuru Funato³, Yoichi Kawakami³, Koichi Okamoto¹ (1.Osaka Metro Univ., 2.OShaRE, 3.Kyoto Univ.)

[11a-PA6-10]Growth of InN layer by plasma-enhanced LPE method (Ⅳ)

〇(M1)Ryota Yamashiro¹, Naoto Kato¹, Daiki Hirose¹, Fusuke Matsumura¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

[11a-PA6-11]Performance improvement in GaInN-based photoelectric transducers with a backside DBR

〇Tomoaki Nonaka¹, Manatsu Nagai¹, Jun Hasegawa¹, Keitaro Yamaguchi¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.NI Tech)

[11a-PA6-12]Approach for the improved uniformity and reproducibility of InGaN-based nanocolumns through the introduction of the Migration-Enhanced Epitaxy method

〇Mahiro Oguchi¹, Rie Togashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

[11a-PA6-13]Local surface potential measurement of GaN thin films by Kelvin probe force microscopy

〇Haruhito Echigo¹, Gen Fujitsuka¹, Toshiki Okamura¹, Hirofumi Yamada², Shin-ichi Yamamoto¹, Yuji Miyato¹ (1.Ryukoku univ., 2.Cent. of Sci. and Tech. Ryukoku Univ.)

[11a-PA6-14]Crystal Orientation and Microstructure of ScN/r-Sapphire Heterostructures

〇Takeshi Ohgaki¹, Isao Sakaguchi¹, Naoki Ohashi¹ (1.NIMS)

[11a-PA6-15]MOCVD-GaN growth using MBE-GaN template on ScAlMgO₄ substrates

〇Gentatsuro Hata¹, Sigeharu Kawabata¹, Md. Earul Islam¹, Takashi Fujii^1,2, Trang Nakamoto¹, Tuguo Hukuda², Syoichi Onda³, Ryuichi Sugie¹, Tutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal Lab., 3.GaNVaL LLC)

[11a-PA6-16]CVD growth of layered boron nitride using BCl₃generated from boron and chlorine gas

〇Ryouta Aoyama¹, Kosuke Hiraoka¹, Ruki Aoike¹, Soma Ota¹, Hayato Nakano¹, Akira Takemura¹, Yuko Kominami¹, Kazuhiko Hara^1,2,3 (1.GSIST, Shizuoka Univ., 2.CMMP, Shizuoka Univ., 3.RIE, Shizuoka Univ.)

[11a-PA6-17]Evaluation of polymorphism of BN thin films grown by low-pressure CVD (2)

〇Kosuke Hiraoka¹, Ryota Aoyama¹, Akira Takemura¹, Hayato Nakano¹, Hiroko Kominami¹, Kohei Shima⁴, Shigefusa Chichibu⁴, Kazuhiko Hara^1,2,3 (1.GSIST, Shizuoka Univ., 2.CMMP, Shizuoka Univ., 3.RIE, Shizuoka Univ., 4.IMRAM, Tohoku Univ.)

[11a-PA6-18]Raman Spectroscopy Analysis of Anisotropic Strain in Semipolar (11-22) AlN

〇Bei Ma^1,2, Kensei Oya², Ryota Akaike², Yoshihiro Ishitani¹, Hideto Miyake² (1.Chiba Univ., 2.Mie Univ.)

[11a-PA6-19]Effect of Point Defects on Structural Stability and Polarization Switching in ScAlN Alloys

〇Shunsuke Matsumoto¹, Toru Akiyama^1,2, Kihiro Kawamura^1,2 (1.Mie Univ, 2.ICSDF Mie Univ)

[11a-PA6-20]Ab initio evaluation of step formation energies on N-polar AlN(0001) surface

〇Taiki Tahara¹, Toru Akiyama^1,2, Takahiro Kawamura^1,2 (1.Mie Univ., 2.ICSDF Mie Univ.)

[11a-PA6-21]Surface Morphology and Crystallinity of High-Temperature-Annealed ECR-Sputtered AlN Buffer Layers and GaN Thin Films

〇(M2)Futa Chiba¹, Hiroshi Suga¹, Hironori Torii² (1.ChibaTech, 2.JSW AFTY)

[11a-PA6-22]In-Brain Temperature Monitoring Using Forward Voltage of µLED Probes

〇Takemi Hanai¹, Atsushi Nishikawa², Alexander Loesing², HIroto Sekiguchi¹ (1.Meijo Univ., 2.ALLOS)

[11a-PA6-23]Theoretical analysis for stability of multivacancies in GaN

〇(M1)Yuki Murakami¹, Toru Akiyama^1,2, Takahiro Kawamura^1,2, Akira Uedono³, Shigefusa Chichibu⁴, Kenji Shiraishi⁵, Atsushi Oshiyama⁵ (1.Mie Univ., 2.ICSDF Mie Univ., 3.Univ. Tsukuba, 4.IMRAM Tohoku Univ., 5.CIES Tohoku Univ.)

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