[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-1] Electrical Conductivity Characteristics of AlGaN/GaN Heterostructures Having Thin AlGaN Layer

〇Takuma Mori¹, Takumi Iwanami¹, Hiroshi Okada¹ (1.Toyohashi Univ. Technol.)

Keywords:

nitride semiconductor,heterostructures,Hall effect