[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-11] Non-polar GaN/AlN Resonant Tunneling Diode Fabricated on
m-Plane GaN Substrate by MOCVD

〇hikaru imaizumi¹, shuto kamiya¹, akira mase¹, keitaro yamaguchi¹, takashi egawa¹, makoto miyoshi¹ (1.Nagoya Institute of Tech)

Keywords:

Resonant Tunneling Diode: RTD,Gallium nitride

To realize Beyond 5G/6G communication, resonant tunneling diodes (RTDs) are attracting attention as ultra-high-speed, high-capacity terahertz wave oscillation devices [1]. In particular, nitride (GaN-based) RTDs are expected to achieve high power output at the mW level [2], but the large polarization characteristic of nitride-based materials degrades the device characteristics, which is a challenge [3]. In this study, we attempted to eliminate the effect of polarization by fabricating an RTD structure on a non-polar m-plane GaN substrate, thereby significantly improving the current density and peak-to-valley current ratio (PVCR).