Presentation Information
[11a-PB1-12]Device fabrication and characterization of AlN/AlGaN Multi-channel HFETs Fabricated on a Single-Crystal AlN Substrate by MOCVD
〇(M2)Shotaro Sato1, Shuto Kamiya1, Keitaro Yamaguchi1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst)
Keywords:
power-semiconductor,Multi-channel,Two-dimensional electron gas
AlN and AlGaN, which are ultra-wide-bandgap (UWBG) semiconductors, are promising candidate materials for next-generation power devices owing to their extremely high breakdown electric fields. Previously, we demonstrated AlGaN-channel HFETs on sapphire substrates and, for the first time, fabricated AlGaN-channel HFETs with an AlN mole fraction exceeding 70% on single-crystal AlN substrates. These devices exhibited clear transistor ON/OFF operation and high off-state breakdown characteristics. In this study, we investigated the application of a multi-channel structure, which has been reported to improve the on-state performance of GaN-channel HFETs, to high-AlN-content AlGaN-channel HFETs in order to address their limited on-state characteristics.