[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-13] Evaluation of nonvolatile memory characteristics of GaN/AlN resonant tunneling diodes with AlGaN interlayers

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:

nitride semiconductor,quantum well,nonvolatile memory

We are studying a high-speed nonvolatile memory using intersubband transitions in GaN/AlN resonant tunneling diodes. However, unstable nonvolatile memory operations due to electron leakage through deep levels in the AlN barriers prevent from realizing the nonvolatile memory. To overcome this issue, we studied a method to suppress the electron leakage using the combination of an AlGaN interlayer and an AlN barrier layer with different bandgap and deep-level energies.