[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-14] Reduced Contact Resistance in N-Polar GaN using Recess Structures

〇Jun Taniguchi¹, Atsushi Yamada¹, Yuichi Minoura¹, Tomoharu Sugino¹, Atsushi Tanaka², Manabu Arai², Jun Suda², Yoshio Honda², Toshihiro Ohki¹, Norikazu Nakamura¹, Hiroshi Amano² (1.Fujitsu Ltd., 2.IMaSS Nagoya Univ.)

Keywords:

N-polar GaN,Contact resistance