[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-23] Analysis of power device performance of Ga pnictides and Ga chalcogenides based on first-principles calculations

〇(M1C)Yuki Takei¹, Noda Yusuke^1,2 (1.Kyushu Inst. Technol., 2.DS&AI Res. Cent., Kyushu Inst. Technol.)

Keywords:

semiconductor,first-principles calculations,power devices

In this presentation, we report the evaluation results of the Baliga Figure of Merit (BFOM) and lattice thermal conductivity for 37 Ga−X (X = N, O, P, S, As, and Se) binary compounds based on first-principles calculations. The electronic and thermal transport properties of each crystal phase were systematically compared to assess their potential as power device materials. The results revealed that several Ga−N and Ga−O phases are promising candidates, exhibiting both high BFOM values and favorable thermal transport characteristics.