Presentation Information
[11a-PB1-24]Physical Origin and Suppression Condition of Geometric Components in Charge Pumping of 4H-SiC nMOSFETs
〇Shuto Oi1, Tetsuo Hatakeyama1, Mitsuru Sometani2, Hirohisa Hirai2, Mitsuo Okamoto2 (1.Toyama Pref. Univ., 2.AIST)
Keywords:
SiC MOSFET,Charge Pumping,Interface Trap Density
Charge pumping (CP) is widely used to evaluate the interface trap density (Dit) in 4H-SiC MOSFETs. However, the measured CP current may include a geometric component (GC), resulting in an overestimation of Dit. In this study, the physical origin of GC was investigated through experiments and TCAD simulations. The results revealed that GC originates from bulk recombination between residual electrons remaining in the channel and holes supplied from the substrate during pulse transitions. Furthermore, a carrier transport model based on electron diffusion length was developed to classify the occurrence of GC. The proposed model successfully explains the dependence of GC on channel length and pulse fall time, providing practical guidelines for accurate Dit characterization in SiC MOSFETs.