Presentation Information
[11a-PB1-27]Electrically-detected-magnetic-resonance (EDMR) observation on conduction-band-side 4H-SiC(0001)/SiO2 interface states reacted with NO post-oxidation anneal
〇Keigo Adachi1, Bunta Shimabukuro1, Mitsuru Sometani2, Hirohisa Hirai2, Heiji Watanabe3, Takahide Umeda1 (1.Univ. of Tsukuba, 2.AIST, 3.UOsaka)
Keywords:
semiconductor,wide band gap,MOS interface
We investigated the effects of NO nitridation on conduction-band-side interface states in 4H-SiC MOSFETs using electrically-detected-magnetic-resonance (EDMR) spectroscopy. Previously, we identified the origins of the interface states at EV + 2.2 eV as interface carbon-adatom dangling-bond center and Si dangling-bond center. The signal intensities of these interface states drastically decreased after the nitridation. Furthermore, no new interface defects were observed, indicating that the nitridation can eliminate the interface states at EV + 2.2 eV.