Presentation Information
[11a-PB1-5]Transient simulation of GaN-MOS CV with deep trap
〇Katsunori Ueno1, Yuto Hoshino1, Ryo Tanaka1, Shinya Takashima1 (1.Fuji Electric)
Keywords:
GaN,MOS,simulation
CV characteristic evaluations of GaN-MOS have revealed the presence of a large number of hole traps. This raises concerns about reliability, such as threshold fluctuations, in power devices. When deep traps are present, the time constant is long, making it impossible to reproduce actual measurement results with conventional DC calculations. Device simulations allow for comparison with actual measurements through transient calculations assuming SRH statistics. This report examines the behavior of CV characteristics with hole traps using transient numerical simulation and compares it with measurement results.