[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-6] MOS analysis on effects of two-step annealing on Mg-ion-implanted HVPE GaN

〇Hinata Karasawa¹, Masamichi Akazawa¹, Shota Kaneki², Hajime Fuzikura² (1.RCIQE, Hokkaido Univ., 2.Sumitomo chemical)

Keywords:

GaN,defects,interface states

To realize highly efficient GaN power devices, ion implantation technology is indispensable. Although Mg ion implantation is promising for fabricating p-type GaN, it is necessary to establish methods for controlling implantation-induced defects. We previously reported the effectiveness of a two-step annealing process, in which an annealing step at 850°C is performed prior to the high-temperature annealing following ion implantation. In this report, we describe the results of applying this method to HVPE GaN and analyzing it using a MOS structure.