[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-8] GaN-based MIS-HEMTs Employing MOCVD-Deposited SiAlN Dielectrics for High-Power and High-Efficiency X-band Power Amplifiers

〇Yuichi Minoura¹, Atsushi Yamada¹, Toshihiro Ohki¹ (1.Fujitsu Ltd.)

Keywords:

GaN,MIS,HEMT