[11a-PB1-1~31] 13.7 Compound and power devices, process technology and characterization

[11a-PB1-9] Performance Enhancement of AlGaN/GaN HEMT via Recessed Gate Structure

〇Masaya Takimoto¹, Tasuku Sumino¹, Tsutomu Matsuura¹, Koji Yoshitsugu¹, Kazuyuki Onoe¹, Takehiro Nishida¹ (1.Mitsubishi Electric Corp.)

Keywords:

Nitride semiconductor,AlGaN/GaN HEMT,Recess gate structure

To enhance the performance of GaN-based HEMTs, we fabricated AlGaN/GaN HEMTs on a substrate and investigated a recessed-gate structure, in which only the AlGaN layer directly beneath the gate was thinned. In this presentation, we report the effects of the recessed-gate structure on device characteristics, including RF performance.