Presentation Information
[11a-PB2-3]Evaluation of Twin Defects in 3C-SiC(111) Films Grown on Si(111) at 800°C Using Monomethylsilane by KOH Etch Pit Analysis
〇Kanji Takahashi1, Shuki Inoue2, Yuzuru Narita1 (1.Yamagata Univ., 2.Yamagata Univ..)
Keywords:
3C-SiC,Twin,KOH Etching