The 87th JSAP Autumn Meeting 2026
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Session Details

Poster presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[11a-PB2-1~4]15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 11, 2026 9:00 AM - 10:30 AM JST
Fri. Sep 11, 2026 12:00 AM - 1:30 AM UTC
PB2 (2nd Gymnasium)

[11a-PB2-1]Hall Effect Characterization of Low-Temperature-Grown 3C-SiC Films on Si(111) Substrates Using Monomethylsilane

〇Hirofumi Kunii1, Yuzuru Narita1 (1.Yamagata Univ.)

[11a-PB2-2]Carrier Lifetime Observation in 4H-SiC PiN Diodes Evaluated by Time-Resolved Electroluminescence

〇Tong Li1, Yoshiyuki Yonezawa2, Masashi Kato1 (1.NITech, 2.AIST)

[11a-PB2-3]Evaluation of Twin Defects in 3C-SiC(111) Films Grown on Si(111) at 800°C Using Monomethylsilane by KOH Etch Pit Analysis

〇Kanji Takahashi1, Shuki Inoue2, Yuzuru Narita1 (1.Yamagata Univ., 2.Yamagata Univ..)

[11a-PB2-4]Preliminary verification for 4H-SiC wafer bipolar-degradation-resistance mapping by sequential UV irradiance steps

〇Takuya Morita1 (1.ITES Co.,Ltd.)
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