[11a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)English Presentation

[11a-S1-1] Study on Self-Heating and Reliability Impact in Self-Aligned Backside-Contact Complementary FET Device Structure

〇JINHYUN CHUN¹, Yuxuan Wang¹, Yaoping Xiao¹, Kobayashi Masaharu¹ (1.IIS, The Univ. of Tokyo)

Keywords:

CFET,Self-Heating,Reliability

This work investigates BTI and HCD degradation in self-aligned backside-contact CFETs and demonstrates the need for sheet-resolved electrothermal reliability analysis under self-heating.