[11a-S1-1~9] 13.5 デバイス／配線／集積化技術

9:00 〜 9:15英語発表

[11a-S1-1] Study on Self-Heating and Reliability Impact in Self-Aligned Backside-Contact Complementary FET Device Structure

〇JINHYUN CHUN¹, Yuxuan Wang¹, Yaoping Xiao¹, Kobayashi Masaharu¹ (1.IIS, The Univ. of Tokyo)

キーワード：

CFET、Self-Heating、Reliability

This work investigates BTI and HCD degradation in self-aligned backside-contact CFETs and demonstrates the need for sheet-resolved electrothermal reliability analysis under self-heating.